Photo Receiverのメーカーや取扱い企業、製品情報、参考価格、ランキングをまとめています。
イプロスは、 製造業 BtoB における情報を集めた国内最大級の技術データベースサイトです。

Photo Receiver - メーカー・企業と製品の一覧

Photo Receiverの製品一覧

1~7 件を表示 / 全 7 件

表示件数

Variable Gain Photo Receiver (OE-200 Series)

A gain-variable photoreceiver optimal for high-speed measurement of various weak lights.

- The conversion efficiency can be set from a range of 10^3 to 10^11 V/W, and AC/DC coupling can also be changed. - It can be controlled both manually and via PC with optical isolation remote. - With a low-noise multi-stage amplifier design and a switchable 10Hz low-pass filter, it can measure optical power down to a minimum range of 100 fW with high accuracy, eliminating the need for signal averaging. - High stability, reduced drift, and calibration based on NIST standards ensure accurate measurements with high stability even at maximum gain settings. - It is ideal for high-speed photodetectors and lock-in amplifier systems in industrial process management and quality inspection systems. - The maximum bandwidth is 500 kHz, making it suitable for time-resolved measurements down to sub-microseconds.

  • Other electronic parts

ブックマークに追加いたしました

ブックマーク一覧

ブックマークを削除いたしました

ブックマーク一覧

これ以上ブックマークできません

会員登録すると、ブックマークできる件数が増えて、ラベルをつけて整理することもできます

無料会員登録

2GHz Photo Receiver (HSA-X-S Series)

A high-performance 2GHz photoreceiver that combines cutting-edge photodiode technology with GHz amplifiers from Femto.

- The diode type is made of Si/InGaAs, with wavelength ranges of 320–1000nm/850–1700nm respectively. - The Si model HSA-X-S-1G4-SI has a ball range placed on the front of the detector chip, with an active area diameter of 0.8mm. - The transimpedance is 5×10^3 V/A. - The minimum NEP is only 14pW/vHz, making it measurable even at μW range optical power levels.

  • Other optical parts
  • Other measurement, recording and measuring instruments

ブックマークに追加いたしました

ブックマーク一覧

ブックマークを削除いたしました

ブックマーク一覧

これ以上ブックマークできません

会員登録すると、ブックマークできる件数が増えて、ラベルをつけて整理することもできます

無料会員登録

Femto-watt photoreceiver (FWPR series)

FEMTO Messtechnik GmbH is a leading manufacturer of low-noise amplifier modules.

■FWPR-20 - A photoreceiver combined with a low-noise Si/InGaAs photodiode and a very high-gain (maximum: 10^12 V/A) low-noise transimpedance amplifier. - Achieves a very low NEP value (minimum: 0.7 fW/√Hz) and high sensitivity in the femtowatt range. - For detection with the photoreceiver alone, it can detect optical power down to approximately 50 fW, and when combined with a Femto lock-in amplifier, it achieves high sensitivity in the sub-femtowatt range. - Due to its very high sensitivity, it can be used in many applications. - It can be used as an alternative to APD, PMT, and cooled Ge photodiodes without the need for expensive high-voltage power supplies or cooling devices.

  • Optical Experimental Parts
  • Other electronic parts

ブックマークに追加いたしました

ブックマーク一覧

ブックマークを削除いたしました

ブックマーク一覧

これ以上ブックマークできません

会員登録すると、ブックマークできる件数が増えて、ラベルをつけて整理することもできます

無料会員登録

400MHz Photo Receiver (HCA-S-400 Series)

400MHz photoreceiver combining high-speed photodiode technology and high-speed current amplifier from Femto.

- There are two types of diodes: Si and InGaAs, with wavelength ranges of 320–1000nm and 900–1700nm, respectively. - The transimpedance is 5×10^3 V/A, and the maximum conversion gain for the InGaAs model at 1550nm is 5×10^3 V/W. - The sophisticated DC-coupled multi-stage amplifier design allows for measurements with a bandwidth of DC–400MHz, corresponding to a minimum rise time of 1ns. - Due to low noise, measurements can be taken without averaging even with light levels of a few μW. - The input can be free space or fiber coupled.

  • Other optical parts
  • Other measurement, recording and measuring instruments

ブックマークに追加いたしました

ブックマーク一覧

ブックマークを削除いたしました

ブックマーク一覧

これ以上ブックマークできません

会員登録すると、ブックマークできる件数が増えて、ラベルをつけて整理することもできます

無料会員登録

400kHz photoreceiver (LCA-S-400 series)

A large-diameter 400kHz photoreceiver that combines cutting-edge photodiode technology with low-noise current amplifier technology.

■The photodiodes used are made of Si or InGaAs, with wavelength ranges of 400–1050nm and 900–1700nm, respectively. ■The transimpedance is 10^7 V/A, and the maximum conversion gain is 9.5×10^6 V/W at 1550nm for the InGaAs model. ■The minimum NEP is approximately 75 fW/√Hz, allowing for the measurement of light signals in the nanowatt range without unnecessary averaging.

  • Other optical parts
  • Other measurement, recording and measuring instruments

ブックマークに追加いたしました

ブックマーク一覧

ブックマークを削除いたしました

ブックマーク一覧

これ以上ブックマークできません

会員登録すると、ブックマークできる件数が増えて、ラベルをつけて整理することもできます

無料会員登録

Variable Gain Photoreceiver (OE-300 Series)

The OE-300 photo receiver consists of a premium quality photodiode followed by a high-end variable gain transimpedance amplifier.

- The low noise performance (NEP) is excellent, particularly setting a benchmark for wideband photoreceivers with gain settings in the high and mid-frequency ranges. - The relatively large size of the detector facilitates optical alignment, and when using the Si model with the optionally available fiber optic adapter PRA-FC/SMA, it also guarantees very high coupling efficiency. - The switchable gain of 102 to 108 V/A (in decimal units) allows for accurate and reliable measurements over a very wide dynamic range, from nanowatts to a maximum of 10 mW of optical power. - With many additional features such as a switchable low-pass filter, offset adjustment, switchable AC/DC coupling, and manual and opto-isolated remote control functions via PC, the OE-300 is the most versatile wideband photoreceiver in its class.

  • Other electronic parts

ブックマークに追加いたしました

ブックマーク一覧

ブックマークを削除いたしました

ブックマーク一覧

これ以上ブックマークできません

会員登録すると、ブックマークできる件数が増えて、ラベルをつけて整理することもできます

無料会員登録

200MHz Photo Receiver (HCA-S-200 Series)

200MHz photoreceiver combining high-speed photodiode technology and high-speed current amplifier from Femto.

- There are two types of diodes: Si-based and InGaAs-based, with wavelength ranges of 320–1000nm and 900–1700nm, respectively. - The transimpedance is 2×10^4 V/A, and the maximum conversion gain for the InGaAs model at 1550nm is 2×10^4 V/W. - Thanks to a sophisticated DC-coupled multi-stage amplifier design, measurements with a bandwidth of DC–200MHz corresponding to a minimum rise time of 1.8ns are possible. - The minimum NEP value is approximately 6pW/√Hz, allowing for the detection of optical power signals in the μW range without unnecessary averaging.

  • Other optical parts
  • Other measurement, recording and measuring instruments

ブックマークに追加いたしました

ブックマーク一覧

ブックマークを削除いたしました

ブックマーク一覧

これ以上ブックマークできません

会員登録すると、ブックマークできる件数が増えて、ラベルをつけて整理することもできます

無料会員登録